Method of manufacturing semiconductor device and thermal annealing apparatus
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United States of America Patent
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Mar 1, 2011
Grant Date -
Jul 16, 2009
app pub date -
Jan 8, 2009
filing date -
Jan 11, 2008
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device has forming a ferroelectric film over a substrate, placing the substrate having the ferroelectric film in a chamber substantially held in vacuum, introducing oxygen and an inert gas into the chamber, annealing the ferroelectric film in the chamber, and containing oxygen and the inert gas while the chamber is maintained sealed.
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