Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element
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United States of America Patent
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-
Nov 19, 2002
Grant Date -
Sep 13, 2001
app pub date -
Dec 28, 2000
filing date -
Jan 18, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. In the step of forming the tunnel barrier layer on the free layer, an Al layer used for making the tunnel barrier layer is formed through sputtering, for example, on the free layer while the substrate is cooled. The Al layer is oxidized to form the tunnel barrier layer.
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