Semiconductor device

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United States of America Patent

PATENT NO 11949411
APP PUB NO 20220385286A1
SERIAL NO

17776698

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Abstract

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A semiconductor device (1) according to the present disclosure includes: an n-channel depletion-mode transistor (10); an input matching circuit inside which the gate terminal (11) and the ground terminal (22) are DC-connected; a self-bias circuit (26) including a resistor (14) biasing the transistor (10) by a voltage drop due to a current flowing through the resistor (14), and a capacitor (15) connected in parallel to the resistor 14) and regarded as short-circuit at a frequency of the high-frequency power; and a diode (31) having an endmost anode connected to the source terminal (12) and an endmost cathode connected to the ground terminal (22), and connected in one stage or connected in series in a plurality of stages in the same direction.

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Patent Owner(s)

  • MITSUBISHI ELECTRIC CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kurusu, Hitoshi Tokyo, JP 15 169

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