Memory with sub-blocks

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United States of America Patent

PATENT NO 8670275
APP PUB NO 20120163082A1
SERIAL NO

13412378

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The apparatuses and methods described herein may comprise a memory array formed on a semiconductor substrate and including a plurality of cells associated with a plurality of word lines. The memory array may comprise a plurality of sub-blocks including a first sub-block and a second sub-block. Each sub-block may comprise a memory cell portion of the plurality of memory cells associated with a corresponding word line portion of the plurality of word lines. The memory cell portions in the first and second sub-blocks may be independently addressable with respect to each other such that a second operation can be performed on at least one memory cell of the memory cell portion of the second sub-block responsive to suspending a first operation directed to at least one memory cell of the memory cell portion of the first sub-block.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Confalonieri, Emanuele Milan, IT 98 765

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