Microwave frequency power divider
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United States of America Patent
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-
Sep 9, 1986
Grant Date -
N/A
app pub date -
Jul 13, 1984
filing date -
Jul 13, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An in-phase power divider is constructed of a double field-effect transistor having a common source, first and second gates and first and second drains. The gates are coupled together and adapted to receive a radio frequency signal of power P to be power divided. The power divided output signals each at substantially P.div.2 or more appear at the drains. An alternative power divider for producing unequal power division is constructed of a double dual gate FET having, in addition to the above-mentioned elements, third and fourth gates. By appropriate unequal application of gate bias to the additional gates unequal power division is effected.
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