Dielectric composition for thin-film transistors

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United States of America Patent

PATENT NO 9058981
APP PUB NO 20140114002A1
SERIAL NO

14142035

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Abstract

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An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.

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Patent Owner(s)

  • XEROX CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Nan-Xing Oakville, CA 360 4314
Liu, Ping Mississauga, CA 542 8658
Wigglesworth, Anthony James Oakville, CA 34 111
Wu, Yiliang Oakville, CA 296 2355

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