Metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements

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United States of America Patent

PATENT NO 11735521
APP PUB NO 20220045001A1
SERIAL NO

17510190

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Embodiments herein may describe techniques for an integrated circuit including a MOSFET having a source area, a channel area, a gate electrode, and a drain area. The channel area may include a first channel region with a dopant of a first concentration next to the source area, and a second channel region with the dopant of a second concentration higher than the first concentration next to the drain area. A source electrode may be in contact with the source area, a gate oxide layer above the channel area, and the gate electrode above the gate oxide layer. A first resistance exists between the source electrode and the gate electrode. A second resistance exists between the source electrode, the gate electrode, and a path through the gate oxide layer to couple the source electrode and the gate electrode after a programming operation is performed. Other embodiments may be described and/or claimed.

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Patent Owner(s)

  • INTEL CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhattacharya, Uddalak Beaverton, US 10 86
Chao, Yu-Lin Portland, US 34 205
Dorgan, Vincent E Hillsboro, US 2 2
Kulkarni, Sarvesh H Hillsboro, US 7 41

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