Magnetic tunnel junction patterning using SiC or SiN
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 30, 2004
Grant Date -
N/A
app pub date -
Jun 20, 2003
filing date -
Jun 20, 2003
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A material that is harder than silicon dioxide is used as a hard mask to pattern the soft layer of an MTJ stack of a magnetic memory device, which increases the process window for post-MTJ stack planarization. The soft layer hard mask material may comprise SiC, SiON, SiCN or SiN or another dielectric material having a Young's modulus greater than the Young's modulus of silicon dioxide. A hard fill dielectric material is also used as an insulating material over the hard mask used to pattern the soft layer. The fill dielectric material may also comprise SiC, SiON, SiCN or SiN or another dielectric material having a Young's modulus greater than the Young's modulus of silicon dioxide.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully