Doped tin tellurides for thermoelectric applications

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United States of America Patent

PATENT NO 8772622
APP PUB NO 20110012069A1
SERIAL NO

12866552

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Abstract

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The p- or n-conductive semiconductor material comprises a compound of the general formula (I)

description='In-line Formulae' end='lead'SnaPb1-a-(x1+ . . . +xn)A1x1 . . . Anxn(Te1-p-q-rSepSqXr)1+z  (I)description='In-line Formulae' end='tail'

    where0.05

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Patent Owner(s)

  • BASF SE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haass, Frank Erzhausen, DE 8 19

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