Dry etch stop process for eliminating electrical shorting in MRAM device structures
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United States of America Patent
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Jun 7, 2011
Grant Date -
Jan 28, 2010
app pub date -
Sep 2, 2009
filing date -
Mar 16, 2006
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Abstract
The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.
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