Forming multi-layer memory arrays

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United States of America Patent

PATENT NO 7157305
SERIAL NO

11392290

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Abstract

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A method of forming a memory array includes forming a stack of two or more layers of memory material on a substrate, each layer of memory material having an array of memory cells, and forming one or more contacts that pass through each of the layers of memory material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Prall, Kirk D Boise, ID 139 2419

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