Storage device and interrupt generation method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11561914
APP PUB NO 20210049120A1
SERIAL NO

17071411

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Abstract

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An interrupt generation method of a storage device includes executing a command provided by a host, writing a completion entry in a completion queue of the host upon completing execution of the command, and issuing an interrupt corresponding to the completion entry to the host in response to at least one of a first interrupt generation condition, a second interrupt generation condition, and a third interrupt generation condition being satisfied. The first interrupt generation condition is satisfied when a difference between a tail pointer and a head pointer of the completion queue is equal to a first mismatch value. The second interrupt generation condition is satisfied when the difference between the tail pointer and the head pointer is at least equal to an aggregation threshold. The third interrupt generation condition is satisfied when an amount of time that has elapsed since a previous interrupt was issued exceeds a reference time.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cha, Hyunseok Osan-si, KR 4 17
Kunnumpurathu, Sivan Sarath Kumar Bangalore-Karnat, IN 5 29
Ryoo, Jungsoo Seongnam-si, KR 2 17

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