Semiconductor memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11222902
APP PUB NO 20200295033A1
SERIAL NO

16529979

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A semiconductor memory device according to an embodiment includes a substrate, first and second conductive layers, first and second pillars, and a first member. The first conductive layer includes a first portion, a second portion, and a third portion above the second portion. The second conductive layers are stacked above the first conductive layer. The first pillar includes a first semiconductor layer in contact with the first portion in a direction crossing the stacked direction. The second pillar is provided to penetrate the second conductive layers and the third portion in the stacked direction. The first member is provided between the first and second pillars and between the second and third portions.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Takamasa Nagoya, JP 38 268
Sakamoto, Manabu Yokkaichi, JP 34 566
Tashiro, Kenji Kuwana, JP 20 120

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