Semiconductor substrate for solid-state imaging sensing device as well as solid-state image sensing device and method for producing the same
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United States of America Patent
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Jul 23, 2013
Grant Date -
Jan 26, 2012
app pub date -
Oct 4, 2011
filing date -
Sep 7, 2006
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Abstract
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved. Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms/cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms/cm3.
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