Avoiding plasma charging in integrated circuits

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United States of America Patent

PATENT NO 7846800
SERIAL NO

12043148

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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. The protection gate oxide reduces plasma induced damage in the primary circuit.

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Patent Owner(s)

  • CHARTERED SEMICONDUCTOR MANUFACTURING LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Jae Gon Singapore, SG 65 760
Quek, Elgin Singapore, SG 125 2316
Tan, Chung Foong Singapore, SG 41 769
Teo, Lee Wee Singapore, SG 40 506
Yin, Chunshan Singapore, SG 18 97

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