Semiconductor light-emitting device and a method to produce the same
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United States of America Patent
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Mar 1, 2011
Grant Date -
Nov 27, 2008
app pub date -
Apr 22, 2008
filing date -
Apr 23, 2007
priority date (Note) -
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Abstract
A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second layer. The first layer is co-doped with an n-type impurity and a p-type impurity. The doping concentration of the p-type impurity in the first layer is smaller than that in the second layer, so, the first layer performs a function of a buffer layer for the Zn diffusion from the second layer to the active layer in the mesa structure.
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