Process for purifying nitrogen trifluoride gas
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United States of America Patent
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Dec 25, 1990
Grant Date -
N/A
app pub date -
May 24, 1989
filing date -
Jun 1, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This invention relates to a process for obtaining a high purity nitrogen trifluoride gas which is used as a dry etching agent for semiconductors or a cleaning gas for CVD apparatus, etc., particularly to a process for removing oxygen difluoride. This is a process for purifying a nitrogen trifluoride gas by, after removing hydrogen fluoride from a nitrogen trifluoride crude gas, contacting with at least one aqueous solution containing one selected from the group consisting of sodium thiosulfate, hydrogen iodide and sodium sulfide.
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