Metal-insulator-metal capacitor fabrication with unitary sputtering process
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United States of America Patent
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Feb 7, 2017
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app pub date -
Nov 18, 2015
filing date -
Nov 18, 2015
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Abstract
A method for the formation of a MIM capacitor on a substrate is described. Initially, a target comprising a metal is sputtered in the presence of nitrogen to form at least a portion of a bottom electrode. Next, the target is further sputtered in the presence of oxygen to form at least a part of an insulator. Finally, the target is even further sputtered in the presence of nitrogen to form a portion of a top electrode. The insulator is sandwiched between the bottom electrode and the top electrode. The formation of the bottom electrode, the insulator, and the top electrode is performed in a sputter deposition chamber without removing the substrate therefrom.
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