Semiconductor memory device and method of fabricating same

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United States of America Patent

PATENT NO 11404538
SERIAL NO

16996282

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Abstract

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A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a substrate, a device isolation pattern between the first impurity region and the second impurity region, a bit-line contact on the first impurity region, a storage node contact on the second impurity region and a dielectric pattern between the bit-line contact and the storage node contact. An upper part of a sidewall of the device isolation pattern has a first slope and a lower part of the sidewall of the device isolation pattern has a second slope different from the first slope.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Sunghee Hwaseong-si, KR 46 335
Hwang, Yoosang Yongin-si, KR 116 687
Kim, Eun A Seoul, KR 18 68
Kim, Hyo-Sub Seoul, KR 10 10
Kim, Soyeong Suwon-si, KR 3 3
Park, Chulkwon Hwaseong-si, KR 10 1
Park, Sohyun Seoul, KR 45 1359
Park, Taejin Gyeonggi-do, KR 50 101

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