Method of measuring degree of crystallinity of polycrystalline silicon substrate, method of fabricating organic light emitting display using the same, and organic light emitting display fabricated using the same
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United States of America Patent
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Jun 21, 2011
Grant Date -
May 29, 2008
app pub date -
Nov 6, 2006
filing date -
Sep 26, 2006
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Abstract
A method of measuring a degree of crystallinity of a polycrystalline silicon substrate includes obtaining a Raman spectrum graph by irradiating a polycrystalline silicon substrate with a laser beam; and calculating a degree of crystallinity of the polycrystalline silicon substrate from the Raman spectrum graph using the following formula: (degree of crystallinity)=(area of polycrystalline peak)/[(area of amorphous peak)+(area of polycrystalline peak)].
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