High voltage diode
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United States of America Patent
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May 3, 2011
Grant Date -
N/A
app pub date -
Sep 25, 2007
filing date -
Sep 26, 2006
priority date (Note) -
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Abstract
A diode, includes a semiconductor substrate, a first region doped with a first dopant type in the substrate, a second region doped with a second dopant type in the substrate, a first well of the first dopant type in the substrate and surrounding the first region and the second region, and a second well of the second dopant type in the substrate connecting the first region and the second region. The first dopant type is opposite the second dopant type.
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