Schottky barrier
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United States of America Patent
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-
Jan 16, 2001
Grant Date -
N/A
app pub date -
Jun 2, 1998
filing date -
Jun 2, 1997
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.
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