Semiconductor device having silicon-rich layer and method of manufacturing such a device
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United States of America Patent
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Mar 23, 2004
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N/A
app pub date -
Jul 31, 2001
filing date -
Jul 31, 2001
priority date (Note) -
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Abstract
A semiconductor device and method of manufacturing a semiconductor device is disclosed in which a SONOS-type dielectric may include a charge storing dielectric (206) that includes at least one charge trapping dielectric layer (212) formed within. A charge trapping dielectric layer (212) may be a silicon-rich silicon nitride layer that may trap charge that could otherwise tunnel through a charge storing dielectric (206). A method may include forming a tunneling dielectric (302), forming a first portion of a charge storing layer (304-0), forming a charge trapping layer (306), forming a second portion of a charge storing layer (304-1), and forming a top dielectric (308).
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