Method of forming a magnetic random access memory element
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United States of America Patent
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Dec 22, 2009
Grant Date -
Nov 2, 2006
app pub date -
Jun 28, 2006
filing date -
Apr 12, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in which a thinner tunnel barrier layer is disposed. The resistance of a magnetic tunnel junction memory element may be controlled by adjusting the surface area and/or thickness of the tunnel barrier layer without regard to the surface area of the ferromagnetic layers.
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