Semiconductor device and method of manufacturing the same
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United States of America Patent
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Nov 21, 2023
Grant Date -
Apr 13, 2023
app pub date -
Dec 13, 2022
filing date -
Sep 20, 2018
priority date (Note) -
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Abstract
A semiconductor device includes a substrate including an active pattern, a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer including a recess on an upper portion thereof, and a lower connection line in the first interlayer dielectric layer, the lower connection line being electrically connected to the active pattern, and the lower connection line including a conductive pattern, the recess of the first interlayer dielectric layer selectively exposing a top surface of the conductive pattern, and a barrier pattern between the conductive pattern and the first interlayer dielectric layer, the first interlayer dielectric layer covering a top surface of the barrier pattern.
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