Semiconductor device with a silicon-on-void structure and method of making the same
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United States of America Patent
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Dec 14, 2004
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app pub date -
Jun 13, 2003
filing date -
Jun 13, 2003
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Abstract
An SOI semiconductor and method for making the same includes a substrate and dielectric support structures that support a silicon body above the substrate. This creates a void underneath the silicon body and thereby reduces the capacitance between the source/drain regions on body and the substrate.
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