Thin film transistor having a transparent electrode and substrate
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United States of America Patent
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-
Jul 20, 1993
Issued Date -
N/A
app pub date -
Feb 5, 1992
filing date -
Sep 9, 1987
priority date (Note) -
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status (Latency Note)
Importance
Abstract
A TFT is formed on a transparent insulative substrate, and includes a gate electrode, a gate insulating film, a semiconductor film which has a channel portion, source and drain electrodes. An insulating film is formed on the TFT so as to cover at least the drain electrode and the gate insulating film. A transparent electrode is formed on at least part of insulating film except for a portion above the channel portion on the semiconductor film. The transparent electrode is electrically connected to the source electrode via a through hole which is formed on the insulating film at a position of the source electrode.
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