Raised photodiode sensor to increase fill factor and quantum efficiency in scaled pixels
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United States of America Patent
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Jan 19, 2010
Grant Date -
Aug 10, 2006
app pub date -
Apr 7, 2006
filing date -
Jun 2, 2004
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Abstract
An image pixel cell with a doped, hydrogenated amorphous silicon photosensor, raised above the surface of a substrate is provided. Methods of forming the raised photosensor are also disclosed. Raising the photosensor increases the fill factor and the quantum efficiency of the pixel cell. Utilizing hydrogenated amorphous silicon decreases the leakage and barrier problems of conventional photosensors, thereby increasing the quantum efficiency of the pixel cell. Moreover, the doping of the photodiode with inert implants like fluorine or deuterium further decreases leakage of charge carriers and mitigates undesirable hysteresis effects.
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