Semiconductor device with heating structure

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United States of America Patent

PATENT NO 11424175
APP PUB NO 20210183721A1
SERIAL NO

17109157

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Abstract

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A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jou, Chewn-Pu Hsinchu, TW 312 1867
Kuo, Feng-Wei Hsinchu County, TW 87 128
Rusu, Stefan Sunnyvale, US 152 1469
Shih, Chih-Tsung Hsinchu, TW 130 1941

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