Semiconductor device

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United States of America Patent

PATENT NO 5345099
SERIAL NO

08056627

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Abstract

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In a CCD device, on a semiconductor substrate, and in the insulation films, plural first semiconductor regions and plural second semiconductor regions are formed buried in the insulation films, intermediating a tunneling insulation film therebetween in a manner to spatially isolate them from each other.

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Patent Owner(s)

  • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamada, Takahiro Hirakata, JP 284 2943

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