Apparatus for plasma synthesis of metal oxide nanopowder

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United States of America Patent

PATENT NO 7501599
APP PUB NO 20050217421A1
SERIAL NO

11089961

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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is disclosed. The metal compound vapour is reacted with an oxidizing gas in electrically induced RF frequency plasma thus forming a metal oxide vapour. The metal oxide vapour is rapidly cooled using a highly turbulent gas quench zone which quickly halts the particle growth process, yielding a substantial reduction in the size of metal oxide particles formed compared with known processes. The metal compound vapour can also react with a doping agent to create a doped metal oxide nanopowder. Additionally, a process and apparatus for the inline synthesis of a coated metal oxide is disclosed wherein the metal oxide particles are coated with a surface agent after being cooled in a highly turbulent gas quench zone.

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Patent Owner(s)

  • TEKNA PLASMA SYSTEMS INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Boulos, Maher I Sherbrooke , CA 34 1042
Jurewicz, Jerzy W Sherbrooke, CA 16 434
Nessim, Christine A Abdel Messih Sherbrooke, CA 3 175

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