Group III nitride semiconductor light-emitting device
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United States of America Patent
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Sep 9, 2014
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May 12, 2008
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Jun 21, 2007
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Abstract
A group III nitride semiconductor light-emitting device comprises an n-type gallium nitride-based semiconductor layer, a first p-type AlXGa1-XN (0≦X<1) layer, an active layer including an InGaN layer, a second p-type AlYGa1-YN (0≦Y≦X<1) layer, a third p-type AlZGa1-XN layer (0≦Z≦Y≦X<1), and a p-electrode in contact with the third p-type AlZGa1-ZN layer. The active layer is provided between the n-type gallium nitride-based semiconductor layer and the first p-type AlXGa1-XN layer. The second p-type AlYGa1-YN (0≦Y≦X<1) layer is provided on the first p-type AlXGa1-XN layer. The p-type dopant concentration of the second p-type AlYGa1-YN layer is greater than the p-type dopant concentration of the first p-type AlXGa1-XN layer. The third p-type AlZGa1-ZN layer (0≦Z≦Y≦X<1) is provided on the second p-type AlYGa1-YN layer. The p-type dopant concentration of the second p-type AlYGa1-YN layer is greater than a p-type dopant concentration of the third p-type AlZGa1-ZN layer.
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