Full-swing source-follower leakage tolerant dynamic logic

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United States of America Patent

PATENT NO 6628143
APP PUB NO 20030058000A1
SERIAL NO

09965360

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Abstract

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An embodiment of a full-swing, source-follower leakage tolerant dynamic logic gate comprises an nMOSFET logic to conditionally charge a node during an evaluation phase, and to charge the node to a relatively small voltage during the pre-charge phase so that the nMOSFET logic becomes reverse-biased.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anders, Mark A Hillsboro, OR 57 567
Hsu, Steven K Lake Oswego, OR 53 461
Krishnamurthy, Ram K Portland, OR 101 1091
Mathew, Sanu K Hillsboro, OR 105 973

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