Power device and direct aluminum bonded substrate thereof
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United States of America Patent
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-
Sep 28, 2004
Grant Date -
Jan 22, 2004
app pub date -
Apr 1, 2003
filing date -
Oct 31, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
Embodiments of the present invention are directed to packaged power semiconductor devices and direct-bonded metal substrates thereof. In one embodiment, a method for manufacturing a power semiconductor device comprises inserting a substrate assembly into a furnace having a plurality of process zones. The substrate assembly includes a first aluminum layer and a second aluminum layer that are electrically isolated from each other by a dielectric layer. The method further comprises providing the substrate assembly successively into each of the plurality of process zones to bond the first and second aluminum layers to the dielectric layer and obtain a direct bonded aluminum (DAB) substrate, attaching a semiconductor die to the first aluminum layer of the DAB substrate, and forming an enclosure around the semiconductor die and the DAB substrate while exposing a substantial portion of the second aluminum layer for enhanced heat dissipation.
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