Method for conditioning a microelectronics device deposition chamber
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United States of America Patent
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Jul 10, 2007
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Apr 12, 2005
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Apr 12, 2005
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Abstract
The present invention provides, in one aspect, a method of conditioning a deposition chamber 100. An undercoat is placed on the walls of a deposition chamber 100 and a pre-deposition coat is deposited over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.
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