Process for the hetero-integration of a semiconductor material of interest on a silicon substrate

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United States of America Patent

PATENT NO 11756787
SERIAL NO

17068756

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Abstract

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A process for the hetero-integration of a semiconductor material of interest on a silicon substrate, includes a step of structuring the substrate which comprises a step of producing a growth mask on the surface of the silicon substrate, the growth mask comprising a plurality of masking patterns, two masking patterns being separated by a trench wherein the silicon substrate is exposed; a step of forming a two-dimensional buffer layer made of a 2D material, the buffer layer being free of side bonds on its free surface and being formed selectively on at least one silicon plane of [111] orientation in at least one trench, the step of forming a buffer layer being performed after the structuring step; a step of forming at least one layer of a semiconductor material of interest on the buffer layer. The semiconductor material of interest is preferably a IV-IV, III-V, II-VI semiconductor material and/or a 2D semiconductor material.

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Patent Owner(s)

  • COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS); UNIVERSITE GRENOBLE ALPES

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baron, Thierry Saint-Egreve, FR 25 174
Loup, Virginie Grenoble, FR 3 0
Martin, Mickaël Grenoble, FR 2 0

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