Non-volatile, resistive memory cell based on metal oxide nanoparticles, process for manufacturing the same and memory cell arrangement of the same
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United States of America Patent
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Nov 20, 2007
Grant Date -
Mar 1, 2007
app pub date -
Jul 28, 2005
filing date -
Jul 28, 2005
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Abstract
Disclosed is a non-volatile memory cell including a first conductive electrode region, a second conductive electrode region and a memory region disposed therebetween. The memory region includes one or a plurality of metal oxide nanoparticles, which contact and electrically connect the first and the second electrode region via contact locations and which exhibit a bistable resistance properties when applying an external voltage.
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