Method of controlling oxygen concentration in single crystal and an apparatus therefor

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United States of America Patent

PATENT NO 5131974
SERIAL NO

07614760

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for controlling an oxygen concentration of a single crystal which is pulled up in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the proportion of the length of the as-grown crystal to the aimed final length thereof or with respect to the passage of time.

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Patent Owner(s)

  • SHIN-ETSU HANDOTAI CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hisaichi, Toshio Annaka, JP 4 29
Oda, Tetsuhiro Takefu, JP 6 81
Ozaki, Atsushi Annaka, JP 28 381
Sonokawa, Susumu Takefu, JP 23 124

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