Dry etching method and production method of magnetic memory device
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United States of America Patent
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Oct 5, 2010
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app pub date -
May 27, 2008
filing date -
Aug 27, 2003
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Abstract
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.
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