Semiconductors with improved thermal budget and process of making semiconductors with improved thermal budget

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United States of America Patent

PATENT NO 11658233
APP PUB NO 20210151592A1
SERIAL NO

16688344

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A device including a substrate, a passivation layer, a source, a gate, a drain, and the gate including at least one step portion. Where the at least one step portion is arranged within the passivation layer, the at least one step portion includes at least one first surface and at least one second surface, where the at least one first surface is connected to the at least one second surface, where the gate includes a third surface, and where the at least one step portion is connected to the third surface. A process is also disclosed.

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Patent Owner(s)

  • WOLFSPEED, INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Kyoung-Keun Cary, US 14 19

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