Methods of forming fine patterns for semiconductor devices
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United States of America Patent
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Aug 4, 2015
Grant Date -
Apr 16, 2015
app pub date -
Aug 25, 2014
filing date -
Oct 10, 2013
priority date (Note) -
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Abstract
Methods of forming fine patterns for semiconductor devices are provided. A method may include sequentially forming a lower layer and a mask layer having first openings on a substrate, forming pillars to fill the first openings and protrude upward from a top surface of the mask layer, forming a block copolymer layer on the substrate with the pillars, performing a thermal treatment to the block copolymer layer to form a first block portion and second block portions, removing the second block portions to form guide openings exposing the mask layer, and etching the mask layer exposed by the guide openings to form second openings.
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