Program method of flash memory device
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United States of America Patent
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Oct 13, 2009
Grant Date -
Oct 9, 2008
app pub date -
Aug 22, 2007
filing date -
Apr 3, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
are measured to obtain a second threshold voltage distribution for the memory cells. A determination is made whether or not the memory cells that have been programmed with the second program voltage have been programmed properly. If the memory cells are determined to have been programmed properly, then the second program voltage is defined as an ending bias for a programming operation. If the memory cells are determined not to have been programmed properly, the memory cells are programmed using a third program voltage that is higher than the second program voltage.
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