Apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochralski (LEC) process
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United States of America Patent
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May 26, 1987
Grant Date -
N/A
app pub date -
Mar 4, 1985
filing date -
Apr 23, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A compound-semiconductor single-crystal-manufacturing apparatus comprises a crucible for holding a molten raw material of GaAs and a liquid capsule element of B.sub.2 O.sub.3, a crucible holder, a heat element concentrically surrounding the crucible, and a heat-shielding unit surrounding the heat element, for use in manufacturing a GaAs single crystal by progressively pulling it up from the raw molten material held in the crucible by the liquid encapsulated Czochralski (LEC) process. The heat-shielding unit and crucible holder are formed by molding a sintered aluminum nitride (AlN) element.
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