Self-aligned double spacer patterning process
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United States of America Patent
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Nov 14, 2017
Issued Date -
N/A
app pub date -
Oct 18, 2016
filing date -
Oct 18, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A method includes forming a mask layer over a target layer. A merge cut feature is formed in the mask layer. A first mandrel layer is formed over the mask layer and the merge cut feature. The first mandrel layer is patterned to form first openings therein. First spacers are formed on sidewalls of the first openings. The first openings are filled with a dielectric material to form plugs. The first mandrel layer is patterned to remove portions of the first mandrel layer interposed between adjacent first spacers. The merge cut feature is patterned using the first spacers and the plugs as a combined mask. The plugs are removed. The mask layer is patterned using the first spacers as a mask. The target layer is patterned, using the mask layer and the merge cut feature as a combined mask, to form second openings therein.
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