High speed IGBT
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United States of America Patent
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-
Sep 15, 1998
Issued Date -
N/A
app pub date -
Jan 16, 1997
filing date -
Sep 19, 1994
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An auxiliary MOSFET is integrated into a lateral IGBT structure with the source and drain of the auxiliary MOSFET in parallel with the emitter-base circuit of the IGBT. A driver, integrated with the IGBT chip, turns off the base emitter voltage to the IGBT before turning off the auxiliary MOSFET during turn off. The auxiliary MOSFET is turned off again at the beginning of the conduction period to ensure full conductivity modulation of the DMOS drain and maximum gain of the PNP transistor. Short circuit protection and overtemperature protection circuits are also integrated into the chip.
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