Trench structure and method of forming trench structure
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United States of America Patent
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Oct 5, 2010
Grant Date -
Oct 23, 2008
app pub date -
Apr 18, 2007
filing date -
Apr 18, 2007
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Abstract
Disclosed are embodiments of an improved deep trench capacitor structure and memory device that incorporates this deep trench capacitor structure. The deep trench capacitor and memory device embodiments are formed on a semiconductor-on-insulator (SOI) wafer such that the insulator layer remains intact during subsequent deep trench etch processes and, optionally, such that the deep trench of the deep trench capacitor has different shapes and sizes at different depths. By forming the deep trench with different shapes and sizes at different depths the capacitance of the capacitor can be selectively varied and the resistance of the buried conductive strap which connects the capacitor to a transistor in a memory device can be reduced.
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- 15 United States
- 10 France
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- 7 China
- 5 Korea
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Patent Owner(s)
- GLOBALFOUNDRIES INC.
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Cheng, Kangguo | Beacon, US | 3065 | 29582 |
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