Bonded semiconductor devices having processor and NAND flash memory and methods for forming the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11864367
APP PUB NO 20210233916A1
SERIAL NO

17228496

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Abstract

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First semiconductor structures are formed on a first wafer. At least one of the first semiconductor structures includes a processor, an array of SRAM cells, and a first bonding layer including first bonding contacts. Second semiconductor structures are formed on a second wafer. At least one of the second semiconductor structures includes an array of NAND memory cells and a second bonding layer including second bonding contacts. The first wafer and the second wafer are bonded in a face-to-face manner, such that the at least one of the first semiconductor structures is bonded to the at least one of the second semiconductor structures. The first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure at a bonding interface. The bonded first and second wafers are diced into dies. At least one of the dies includes the bonded first and second semiconductor structures.

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Patent Owner(s)

Patent OwnerAddress
YANGTZE MEMORY TECHNOLOGIES CO LTD18 GAOXIN 4TH ROAD EAST LAKE HIGH-TECH DEVELOPMENT ZONE WUHAN HUBEI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Weihua Wuhan, CN 36 147
Liu, Jun Wuhan, CN 1407 16613

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