Photodetectors array with isolated pixels and storage grid, hybridized on a readout circuit
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United States of America Patent
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Sep 18, 2007
Grant Date -
Dec 4, 2003
app pub date -
Apr 8, 2003
filing date -
Apr 12, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The invention relates to a photodetectors array that will be hybridized on a readout circuit (30) and realized from a wafer of semiconducting material (11). The wafer is divided into pixels (12), each pixel forming a photodetector, the pixels being separated from each other by separation means formed in the wafer and comprising a photogrid for photodetectors, each photodetector having a connection pad (18) to hybridize the photodetectors array to the readout circuit.
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