Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma
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United States of America Patent
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Mar 6, 2007
Grant Date -
Nov 24, 2005
app pub date -
May 24, 2004
filing date -
May 24, 2004
priority date (Note) -
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Abstract
A high selectivity and etch rate with innovative approach of inductively coupled plasma source. Preferably, the invention includes a method using plasma chemistry that is divided into main etch step of (e.g., Cl.sub.2+HBr+C.sub.4F.sub.8) gas combination and over etch step of (e.g., HBr+Ar). The main etch step provides a faster etch rate and selectivity while the over etch step will decrease the etch rate and ensure the stringer and residue removal without attacking the under layer.
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