Plasma etching method
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United States of America Patent
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Mar 6, 2007
Grant Date -
Apr 27, 2006
app pub date -
Feb 23, 2005
filing date -
Oct 25, 2004
priority date (Note) -
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Abstract
The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against an organic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl.sub.2, BCl.sub.3, and HBr; and at least a gas selected from a group consisting of CH.sub.2Cl.sub.2, CH.sub.2Br.sub.2, CH.sub.3Cl, CH.sub.3Br, CH.sub.3F, and CH.sub.4.
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